Interface-engineered electron and hole tunneling

Selective control of electron and hole tunneling in 2D assembly

Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains. A new class of 2D...

Tunneling current bistability of correlated 2D electron±hole layers

We study the low-temperature vertical tunneling current (TC) of a system of coupled 2D electron and hole gases (2DEG, 2DHG) of equal density realized in a single-barrier GaAs/AlAs/GaAs p±i±n heterostructure under conditions of forward bias. The density can be tuned by external voltage and the in-plane inter-particle distance can be made comparable to the layer separation (25 nm), the GaAs Bohr ...

Engineering the Electron-Hole Bilayer Tunneling Field- Effect Transistor

The electron-hole (EH) Bilayer Tunneling FieldEffect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for ...

Parallel electron-hole bilayer conductivity from electronic interface reconstruction.

The perovskite SrTiO3-LaAlO3 structure has advanced to a model system to investigate the rich electronic phenomena arising at polar oxide interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO3 capping layer prevents atomic reconstruction at the LaAlO3 surface and triggers the electronic reconstruction at a significantly lower LaAlO3 f...

Electron tunneling and superconductivity.